Title :
A half-bridge driver IC with newly designed high voltage diode
Author :
Watabe, Kiyoto ; Shimizu, Kazuhiro ; Akiyama, Hajime ; Araki, Toru ; Moritani, Junichi ; Fukunaga, Masanori
Author_Institution :
Power Device Div., Mitsubishi Electr. Corp., Fukuoka, Japan
Abstract :
A newly designed diode is proposed and demonstrated in action experimentally. The new device has successfully increased forward current without additional mask and increase of the area. Remarkable improvement in the reverse recovery characteristic of the new diode can be realized by electron irradiation. The fabricated ICs with the new diode operated at 3 kHz PWM carrier frequency
Keywords :
bridge circuits; driver circuits; electron beam effects; power integrated circuits; power semiconductor diodes; semiconductor device breakdown; 3 kHz; 720 V; HVIC; PWM carrier frequency; breakdown characteristic; electron irradiation; forward current; half-bridge driver IC; high voltage diode; junction isolated substrate; multiple floating field plate structure; reverse recovery characteristic; Anodes; Breakdown voltage; Cathodes; Charge carrier lifetime; Diodes; Driver circuits; Electrons; MOSFET circuits; Pulse width modulation; Pulse width modulation inverters;
Conference_Titel :
Power Semiconductor Devices and ICs, 2001. ISPSD '01. Proceedings of the 13th International Symposium on
Conference_Location :
Osaka
Print_ISBN :
4-88686-056-7
DOI :
10.1109/ISPSD.2001.934609
