DocumentCode :
3256155
Title :
Partial discharges and light emission from ceramic substrates embedded in liquids and gels
Author :
Tho, V.T.A. ; Augé, J.L. ; Lesaint, O.
Author_Institution :
Grenoble Electr. Eng. Lab. (G2E Lab.), Joseph Fourier Univ., Grenoble, France
fYear :
2011
fDate :
26-30 June 2011
Firstpage :
1
Lastpage :
4
Abstract :
Aluminium nitrite (AlN) or alumina (Al2O3) substrates are widely used in power electronics modules, due to their ability to provide both electrical insulation, and heat conduction properties. A silicon gel usually covers the substrate, semiconductor chips, and bondings to prevent partial discharges (PD) from occurring within the module. However, at high voltage PDs can be observed in high electric field regions, mainly at the sharp edges of copper tracks on the substrate. In this study, we try to determine the origin of these PDs. Phase resolved PD recordings (PRPD) and optical visualization at very high sensitivity are carried out on substrates embedded in gel or insulating liquids. PD features are very different from those obtained in needle-plane geometry in gel or liquid, and do not depend on the nature of the liquid or gel. The main conclusion is that PDs recorded with substrates originate from the ceramic material itself, due to the presence of numerous μm-sized pores in sintered materials.
Keywords :
III-V semiconductors; alumina; gels; heat conduction; insulation; partial discharges; wide band gap semiconductors; Al2O3; AlN; PRPD; alumina; aluminium nitrite; ceramic material; ceramic substrate; copper; electric field region; electrical insulation; heat conduction property; insulating liquid; light emission; needle-plane geometry; optical visualization; phase resolved partial discharge recording; power electronics module; semiconductor chip; silicon gel; sintered material; Capacitors; Ceramics; Liquids; Noise measurement; Partial discharges; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Dielectric Liquids (ICDL), 2011 IEEE International Conference on
Conference_Location :
Trondheim
ISSN :
2153-3725
Print_ISBN :
978-1-4244-7352-6
Electronic_ISBN :
2153-3725
Type :
conf
DOI :
10.1109/ICDL.2011.6015490
Filename :
6015490
Link To Document :
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