DocumentCode :
32563
Title :
Influence of forward pumping current on current interruption by semiconductor opening switch
Author :
Sugai, Taichi ; Weihua Jiang ; Tokuchi, Akira
Author_Institution :
Nagaoka Univ. of Technol., Nagaoka, Japan
Volume :
22
Issue :
4
fYear :
2015
fDate :
Aug-15
Firstpage :
1971
Lastpage :
1975
Abstract :
Forward pumping current is required for current interruption operation of a semiconductor opening switch (SOS). In this study, the influence of the forward pumping current on current interruption of the reverse current has been investigated experimentally. The duration and the peak value of the forward current were varied and the reverse current obtained under different conditions has been compared. As a result, it has been found that a short forward current can lead to high peak value of the reverse current. It is considered from the results that the density of the minority carriers is increased by the forward current of shorter duration because recombination consumes fewer carriers. Furthermore, when the duration of the forward current shortens with a lower peak value and depletion the peak value of the reverse current increases, the interruption of reverse current quickens. This can be explained by the fact that the time during which minority carriers are turned around by the reverse current is shorter in case of less accumulation and faster removal of minority carriers. With these investigations, it has been understood that relatively short and low forward current and high reverse current is needed for high efficiency inductive energy storage circuit using the SOS.
Keywords :
carrier mobility; electron-hole recombination; inductive energy storage; pulsed power supplies; semiconductor switches; SOS; carrier recombination; current interruption; forward current; inductive energy storage circuit; minority carriers; pumping current; reverse current; semiconductor opening switch; Capacitors; Energy storage; Inductance; Interrupters; Resistors; Switches; Windings; Pulse power system switches; pulse transformers; semiconductor diode switches;
fLanguage :
English
Journal_Title :
Dielectrics and Electrical Insulation, IEEE Transactions on
Publisher :
ieee
ISSN :
1070-9878
Type :
jour
DOI :
10.1109/TDEI.2015.004989
Filename :
7179156
Link To Document :
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