DocumentCode
3256327
Title
Design consideration of 1000 V merged PiN Schottky diode using superjunction sustaining layer
Author
Napoli, Ettore ; Strollo, Antonio G M
Author_Institution
Dept. of Electron. & Telecom. Eng., Univ. of Naples Federico II, Italy
fYear
2001
fDate
2001
Firstpage
339
Lastpage
342
Abstract
The paper presents a novel rectifier structure based on superjunction technique, the Superjunction Merged PiN Schottky diode. Optimal diode design is obtained exploiting a two-dimensional analytical model, able to correctly estimate electric field, for the calculation of breakdown voltage of power superjunction devices. Device performances are analyzed with 2D numerical simulations and compared to standard PiN and Schottky diodes
Keywords
Schottky diodes; p-i-n diodes; power semiconductor diodes; semiconductor device breakdown; semiconductor device models; solid-state rectifiers; SJ-MPS rectifier; breakdown voltage; design optimization; electric field; merged PiN Schottky diode; numerical simulation; power device; superjunction sustaining layer; two-dimensional analytical model; Analytical models; Circuits; Electrostatics; MOSFETs; Numerical simulation; Poisson equations; Rectifiers; Schottky diodes; Telecommunications; Virtual reality;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Semiconductor Devices and ICs, 2001. ISPSD '01. Proceedings of the 13th International Symposium on
Conference_Location
Osaka
ISSN
1063-6854
Print_ISBN
4-88686-056-7
Type
conf
DOI
10.1109/ISPSD.2001.934624
Filename
934624
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