Title :
A 650 V rated RESURF-type LDMOS employing an internal clamping diode for induced bulk breakdown without EPI layer
Author :
Kim, M.H. ; Kim, J.J. ; Choi, Y.S. ; Jeon, C.K. ; Kim, S.L. ; Kang, H.S. ; Song, C.S.
Author_Institution :
New Technol. Dev. Team, Fairchild Korea Semicond. Co., Puchon, South Korea
Abstract :
A new LDMOS employing an internal clamping diode is proposed in order to prevent surface breakdown which is a weak point of RESURF Type LDMOS. The clamping diode of N+/N-/P-well/P-sub was fabricated by cutting n-well located below drain contact and inserting p-well. Breakdown stabilization was realized by inducing bulk breakdown at the clamping diode without the increase of Ron,sp (specific on resistance) when width of p-well was designed to 12 um
Keywords :
power MOSFET; semiconductor device breakdown; 650 V; RESURF LDMOS transistor; bulk breakdown; internal clamping diode; specific on-resistance; surface breakdown; Breakdown voltage; Clamps; Contacts; Electric breakdown; Energy consumption; Epitaxial layers; Medical simulation; Power integrated circuits; Semiconductor diodes; Surface resistance;
Conference_Titel :
Power Semiconductor Devices and ICs, 2001. ISPSD '01. Proceedings of the 13th International Symposium on
Conference_Location :
Osaka
Print_ISBN :
4-88686-056-7
DOI :
10.1109/ISPSD.2001.934626
