Title :
800 V/1A, 1-chip process for battery charger IC
Author :
Jeon, C.K. ; Kim, J.J. ; Choi, Y.S. ; Kim, M.H. ; Kim, S.L. ; Kang, H.S. ; Song, C.S.
Author_Institution :
New Technol. Dev. Team, Fairchild Korea Semicond. Co., Puchon, South Korea
Abstract :
800 V, 1-chip IC for a battery charger with no epi. layer was successfully developed by using a specially well designed layout in which the drain metal of LDMOS was drawn out from each n-well and connected in low doped p-type substrate. When compared to 700 V sustaining voltage and 0.55 Ωcm2 Ron,sp in conventional layout, the experimental results showed that the sustaining voltage was found to be improved up to 800 V and Ron,sp to 0.38Ωcm2, respectively
Keywords :
MOS integrated circuits; battery chargers; 1 A; 800 V; LDMOS IC; battery charger; one-chip process; specific resistance; sustaining voltage; Batteries; Breakdown voltage; CMOS process; Costs; Doping; Drives; Energy consumption; Packaging; Power dissipation; Switches;
Conference_Titel :
Power Semiconductor Devices and ICs, 2001. ISPSD '01. Proceedings of the 13th International Symposium on
Conference_Location :
Osaka
Print_ISBN :
4-88686-056-7
DOI :
10.1109/ISPSD.2001.934628
