Title :
A novel gate drive circuit for low-loss system using IGBT saturation voltage characteristics
Author :
Takizawa, Satoki ; Igarashi, Seiki ; Kuroki, Kazuo
Author_Institution :
Fuji Electr. Corp. Res. & Dev. Ltd., Tokyo, Japan
Abstract :
This paper proposes the new gate drive circuit for IGBTs to reduce the turn-off loss. The feature of the circuit is to drive an IGBT with plural gate resistors which were settled by the turn-off current levels. From the experiment and simulation results, the turn-off loss was cut to more than 50% in comparison with the conventional drive system
Keywords :
driver circuits; insulated gate bipolar transistors; IGBT; gate drive circuit; saturation voltage; turn-off loss; Circuit simulation; Detectors; Insulated gate bipolar transistors; Inverters; Logic circuits; Logic devices; Research and development; Resistors; Surges; Voltage;
Conference_Titel :
Power Semiconductor Devices and ICs, 2001. ISPSD '01. Proceedings of the 13th International Symposium on
Conference_Location :
Osaka
Print_ISBN :
4-88686-056-7
DOI :
10.1109/ISPSD.2001.934633
