DocumentCode
3256549
Title
Using two-dimensional structures to model filamentation in semiconductor devices
Author
Hower, P. ; Pendharkar, S. ; Steinhoff, R. ; Brodsky, J. ; Devore, J. ; Grose, W.
Author_Institution
Texas Instrum., Merrimack, NH, USA
fYear
2001
fDate
2001
Firstpage
385
Lastpage
388
Abstract
A simple method for demonstrating filamentation in lateral power devices is described. The results show that "mathematically perfect" junctions need to have defects added to initiate filamentation. When this is done, two-dimensional simulations exhibit behavior that is seen in practice. One application of these results is the design of protection structures
Keywords
power semiconductor devices; semiconductor device models; current filamentation; lateral power device; semiconductor device model; two-dimensional simulation; Character generation; Driver circuits; Fingers; Impact ionization; Instruments; Pulse generation; Resistors; Semiconductor devices; Thermal resistance; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Semiconductor Devices and ICs, 2001. ISPSD '01. Proceedings of the 13th International Symposium on
Conference_Location
Osaka
ISSN
1063-6854
Print_ISBN
4-88686-056-7
Type
conf
DOI
10.1109/ISPSD.2001.934635
Filename
934635
Link To Document