A power optimization method to design Butterworth filter on SiGe process

Author

Tang, Rui ; Kim, Yong-Bin ; McDaniel, Bart

Author_Institution

Dept. of Electr. & Comput. Eng., Northeastern Univ., Boston, MA

fYear

2005

fDate

7-10 Aug. 2005

Firstpage

1633

Abstract

A novel approach to design operational amplifier with large unit gain bandwidth (UGBW) and high phase margin (PM) is proposed that focuses on minimizing power dissipation. After poles and zeros are determined according to the specifications of UGBW and PM, the design formulations can be significantly simplified for power optimization. The design of an operational amplifier on 0.18 mum SiGe BiCMOS process is presented as an example. A dual mode low pass filter for wide-band and GSM is implemented based on this op-amp

Keywords

BiCMOS integrated circuits; Butterworth filters; Ge-Si alloys; circuit optimisation; operational amplifiers; poles and zeros; 0.18 micron; Butterworth filter design; GSM; PM specification; SiGe; SiGe BiCMOS process; UGBW specification; dual mode low pass filter; high phase margin; large unit gain bandwidth; operational amplifier design; poles and zeros; power optimization method; wide-band; Bandwidth; Design methodology; Filters; Germanium silicon alloys; High power amplifiers; Operational amplifiers; Optimization methods; Poles and zeros; Power dissipation; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 2005. 48th Midwest Symposium on

Conference_Location

Covington, KY

Print_ISBN

0-7803-9197-7

Type

conf

DOI

10.1109/MWSCAS.2005.1594430

Filename

1594430