Title :
A power optimization method to design Butterworth filter on SiGe process
Author :
Tang, Rui ; Kim, Yong-Bin ; McDaniel, Bart
Author_Institution :
Dept. of Electr. & Comput. Eng., Northeastern Univ., Boston, MA
Abstract :
A novel approach to design operational amplifier with large unit gain bandwidth (UGBW) and high phase margin (PM) is proposed that focuses on minimizing power dissipation. After poles and zeros are determined according to the specifications of UGBW and PM, the design formulations can be significantly simplified for power optimization. The design of an operational amplifier on 0.18 mum SiGe BiCMOS process is presented as an example. A dual mode low pass filter for wide-band and GSM is implemented based on this op-amp
Keywords :
BiCMOS integrated circuits; Butterworth filters; Ge-Si alloys; circuit optimisation; operational amplifiers; poles and zeros; 0.18 micron; Butterworth filter design; GSM; PM specification; SiGe; SiGe BiCMOS process; UGBW specification; dual mode low pass filter; high phase margin; large unit gain bandwidth; operational amplifier design; poles and zeros; power optimization method; wide-band; Bandwidth; Design methodology; Filters; Germanium silicon alloys; High power amplifiers; Operational amplifiers; Optimization methods; Poles and zeros; Power dissipation; Silicon germanium;
Conference_Titel :
Circuits and Systems, 2005. 48th Midwest Symposium on
Conference_Location :
Covington, KY
Print_ISBN :
0-7803-9197-7
DOI :
10.1109/MWSCAS.2005.1594430
