Breaking the silicon limit using semi-insulating Resurf layers

In this paper, we present results on a novel multi-Resurf technique that involves the use of semi-insulating layers, in which the flattening of the electric field profile is achieved by virtue of a small leakage current. Unlike conventional Resurf devices, this technique provides a perfect flattening of the field profile without the requirement of an accurate charge balance. Experimental results show an increase in steady-state breakdown voltage from 19 to 85 V for a device having 4 μm drift regions doped at 5e16 cm^-3, with corresponding R_on below the silicon limit