DocumentCode
3256565
Title
Sinh filters in weak inversion CMOS technology
Author
Katsiamis, A.G. ; Drakakis, E.M.
Author_Institution
Dept. of Bioeng., Imperial Coll., London, UK
fYear
2005
fDate
7-10 Aug. 2005
Firstpage
1637
Abstract
The scope of this paper is to evaluate the potential of Sinh filters synthesized by exploiting the exponential V-I relation of weakly inverted MOS devices. We report quiescent power consumption, tunability and linearity simulation results for: (a) a lowpass biquad, (b) a bandpass bi-quad and (c) a third-order Butterworth lowpass CMOS Sinh filter response using the 0.35 μm AMS process parameters. Frey´s state-variable mapping procedure is followed. Key synthesis and performance limitations are identified.
Keywords
Butterworth filters; CMOS integrated circuits; MIS devices; biquadratic filters; low-pass filters; 0.35 micron; AMS process parameters; Frey state-variable mapping; bandpass bi-quad; exponential V-I relation; linearity simulation; lowpass CMOS Sinh filter; lowpass biquad; quiescent power consumption; third-order Butterworth filter; tunability; weak inversion CMOS technology; weakly inverted MOS devices; Band pass filters; CMOS technology; Circuits; Differential equations; Electronic switching systems; Kirchhoff´s Law; Network synthesis; Nonlinear equations; Prototypes; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems, 2005. 48th Midwest Symposium on
Print_ISBN
0-7803-9197-7
Type
conf
DOI
10.1109/MWSCAS.2005.1594431
Filename
1594431
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