Title :
600 V-IGBT with reverse blocking capability
Author :
Takei, M. ; Harada, Y. ; Ueno, K.
Author_Institution :
Fuji Electr. Corp. Res. & Dev. Ltd., Matsumoto, Japan
Abstract :
A vertical 600 V-50 A IGBT with reverse blocking capability is developed for the first time. Our measurement shows reverse blocking capability up to 900 V. This IGBT can be used as a bi-directional IGBT in combination with another reverse blocking IGBT. Bi-directional IGBTs realize the low-loss AC-AC direct conversion circuit. There is great possibility to improve the performance of the reverse blocking IGBT by utilizing the FZ-NPT-IGBT structure
Keywords :
AC-AC power convertors; insulated gate bipolar transistors; 50 A; 600 V; AC-AC direct conversion circuit; FZ-NPT-IGBT structure; bi-directional IGBT; power device; reverse blocking; vertical IGBT; Bidirectional control; Circuits; Diodes; Etching; Insulated gate bipolar transistors; Leakage current; Rough surfaces; Silicon; Substrates; Surface roughness;
Conference_Titel :
Power Semiconductor Devices and ICs, 2001. ISPSD '01. Proceedings of the 13th International Symposium on
Conference_Location :
Osaka
Print_ISBN :
4-88686-056-7
DOI :
10.1109/ISPSD.2001.934641
