Title :
Gain calculation of InGaAsP/InP multi-quantum well lasers
Author :
Melouk, K. ; Bousbah, K. ; Boughanmi, N. ; Krachai, M.D.
Author_Institution :
Dept. of Electron., Lab. of Optoelectron., Oran, Algeria
Abstract :
Analytical formula for the optical gain based on a simple parabolic-band by introducing theoretical expressions for the quantized energy is presented. The model used in this treatment take into account the effects of intraband relaxation. It is shown, as a result, that the gain for the TE mode is larger than that for TM mode and the presence of acceptor impurity increase the peak gain.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; impurity states; indium compounds; quantum well lasers; semiconductor device models; InGaAsP-InP; InGaAsP-InP multiquantum well lasers; TE mode; TM mode; acceptor impurity; intraband relaxation effects; optical gain calculation; parabolic band; quantized energy; semiconductor device models; Charge carrier processes; Energy states; Fiber lasers; Indium phosphide; Laboratories; Laser modes; Optical devices; Quantum well lasers; Stimulated emission; Tellurium;
Conference_Titel :
Microelectronics, 2004. ICM 2004 Proceedings. The 16th International Conference on
Print_ISBN :
0-7803-8656-6
DOI :
10.1109/ICM.2004.1434732
