Memory Effects in Si/SiO2/Nano-Crystalline PbS Heterostructures

Author

Buda, M. ; Stancu, V. ; Pentia, E. ; Botila, T.

Author_Institution

National Inst. of Material Phys., Bucharest-Magurele

Volume

2

fYear

2006

fDate

27-29 Sept. 2006

Firstpage

249

Lastpage

252

Abstract

The mechanism of charge storage in p Si/SiO₂/nano-crystalline PbS heterostructures is investigated using capacitance-voltage (C-V) and conductance-voltage (G-V) measurements at different frequencies. The nanocrystalline thin PbS films were obtained using the chemical bath deposition method with a shorter reaction time and without doping element in the reducing bath. The C-V curves show hysteresis indicating charge storage with a maximum charge density of 3 times 10¹¹ cm^-2 for the highest measurement frequency of 100 kHz. The charge storage capacity is enhanced in the case of using a nanocrystalline PbS thin film instead of a standard macro-crystalline film

Keywords

IV-VI semiconductors; composite materials; lead compounds; liquid phase deposited coatings; nanostructured materials; photoconductivity; semiconductor storage; semiconductor thin films; silicon; silicon compounds; 100 kHz; Si-SiO₂-PbS; capacitance-voltage measurements; charge storage; chemical bath deposition method; conductance-voltage measurements; heterostructures; macrocrystalline film; memory effects; nanocrystalline thin films; Capacitance measurement; Capacitance-voltage characteristics; Charge measurement; Chemical elements; Current measurement; Density measurement; Doping; Frequency measurement; Hysteresis; Transistors; Heterostructures; Nano-crystalline PbS; Optoelectronics;

fLanguage

English

Publisher

ieee

Conference_Titel

International Semiconductor Conference, 2006

Conference_Location

Sinaia

Print_ISBN

1-4244-0109-7

Type

conf

DOI

10.1109/SMICND.2006.283989

Filename

4063217