Title :
Characterization of Ba0.5Sr0.5TiO3 Thin Films For Tuneable Devices
Author :
Ioachim, A. ; Toacsa, M.I. ; Banciu, M.G. ; Nedelcu, L. ; Dutu, C.A. ; Sava, F. ; Popescu, M. ; Scirisoreanu, N. ; Dinescu, M.
Author_Institution :
National Inst. of Mater. Phys., Bucharesl-Magurele
Abstract :
Barium strontium titanate (BST) bulk ceramic was used as target for PLD thin film deposition. In order to avoid stoichiometry modification during the deposition, a more reactive oxidant ambient in the chamber was produced by using a radiofrequency discharge 13.56 MHz, 150 W. Thin films of stoichiometric BST was deposited on alumina substrate with the thickness between 400 and 500 nm heated at 650degC. An additional annealing was made at 800degC for 6 hours. XRD and SEM were used for sample characterization. Capacity measurements at 100 kHz were performed versus temperature
Keywords :
X-ray diffraction; aluminium compounds; annealing; barium compounds; ferroelectric ceramics; ferroelectric thin films; pulsed laser deposition; scanning electron microscopy; strontium compounds; 100 kHz; 13.56 MHz; 150 W; 400 to 500 nm; 6 hrs; 650 C; 800 C; Ba0.5Sr0.5TiO3; PLD thin film deposition; SEM; XRD; alumina substrate; annealing; barium strontium titanate bulk ceramic; radiofrequency discharge; reactive oxidant; stoichiometric BST; stoichiometry modification; tuneable devices; Annealing; Barium; Binary search trees; Ceramics; Radio frequency; Sputtering; Strontium; Substrates; Thin film devices; Titanium compounds; Barium strontium titanate; PLD; film;
Conference_Titel :
International Semiconductor Conference, 2006
Conference_Location :
Sinaia
Print_ISBN :
1-4244-0109-7
DOI :
10.1109/SMICND.2006.283995
