Title :
The Most Suitable Application of SiC Diode
Author :
Makino, Tomoaki ; Hirota, Atsushi ; Nagai, Satoshi
Author_Institution :
Tsuyama Nat. Coll. of Technol., Tsuyama
Abstract :
In recent years, next generation silicon carbide (SiC) diodes were put to practical use. This SiC diodes have many advantages compared with fast recovery diode(Si-FRD) from the aspect of small recovery charge. To make use of this advantage, the most suitable operating conditions is to use at current lead mode of high frequency inverter circuit. In this paper, the authors evaluated SiC diode + IGBT inverter at current lead mode and Power MOSFET inverter at current lag mode. From the experimental results, switching loss of SiC + IGBT inverter over 100 kHz frequency operation range is sufficiently small. As a result, high efficiency inverter using IGBTs over 100 kHz frequency range can be realized for practical use.
Keywords :
insulated gate bipolar transistors; invertors; power MOSFET; power bipolar transistors; power semiconductor diodes; silicon compounds; IGBT inverter; SiC; current lag mode; current lead mode; high-frequency inverter circuit; power MOSFET inverter; silicon carbide diodes; switching loss; Diodes; Frequency; Inductors; Insulated gate bipolar transistors; Inverters; Loss measurement; MOSFET circuits; Power MOSFET; Silicon carbide; Switching loss; SiC device; inverter application; switching loss;
Conference_Titel :
Power Electronics and Drive Systems, 2007. PEDS '07. 7th International Conference on
Conference_Location :
Bangkok
Print_ISBN :
978-1-4244-0645-6
Electronic_ISBN :
978-1-4244-0645-6
DOI :
10.1109/PEDS.2007.4487921
