Numerical and Experimental Investigation on Bipolar Operation of 4H-SIC Normally-on Vertical JFETs

Author

Mihaila, Andrei ; Udrea, F. ; Rashid, S.J. ; Godignon, P. ; Brosselard, P. ; Tournier, D. ; Millan, J. ; Amaratunga, G. ; Brezeanu, G.

Author_Institution

Dept. of Eng., Cambridge Univ.

Volume

2

fYear

2006

fDate

27-29 Sept. 2006

Firstpage

297

Lastpage

300

Abstract

It is well known from the literature published on Si devices that junction field effect transistors (JFETs) can be either operated in a unipolar mode (when the gate junction bias is less than 0.4 V) or in a bipolar mode (when the gate junction inject minority carriers into the channel/drift region to modulate its resistance)- The latter mode of operation is typically used to improve the on-state performance of normally-off JFETs. The aim of this paper is to investigate the bipolar mode of operation of 4H-SiC normally-on vertical JFETs. Both numerical and experimental results will be used to conclude whether the bipolar mode of operation offers any clear advantages to SiC normally-on JFETs. The influence of high temperature operation (up to 300degC) on the on-state characteristics will also be considered

Keywords

carrier mobility; junction gate field effect transistors; minority carriers; silicon compounds; SiC; bipolar mode; gate junction; junction field effect transistors; minority carriers; normally-off JFET; normally-on vertical JFET; on-state performance; unipolar mode; Annealing; Buffer layers; Doping; Etching; FETs; JFETs; Silicon carbide; Switches; Temperature; Voltage control; JFETs; bipolar operation; high temperature operation; normally-on;

fLanguage

English

Publisher

ieee

Conference_Titel

International Semiconductor Conference, 2006

Conference_Location

Sinaia

Print_ISBN

1-4244-0109-7

Type

conf

DOI

10.1109/SMICND.2006.284002

Filename

4063230