Title :
Pentacene Organic Mosfets with Au and Pt Bottom Contacts
Author :
Anghel, C. ; Manolescu, A. ; Ionescu, A.M.
Abstract :
This work reports on the fabrication and characterization of the organic thin film transistors OTFTs. Pentacene transistors are fabricated in bottom S/D contact configurations on preoxidized Si wavers. Two different metals - Pt, Au - are used for the contacts. Similar performances are reported for Au and Pt bottom contact devices. It is revealed that the pentacene deposition rate critically influences the morphology of the film and the transistor performances. Special test structures revealed that the carrier conduction takes place only in the organic layer
Keywords :
MOSFET; gold; organic semiconductors; platinum; Au; MOSFET; Pt; Si; bottom contact devices; carrier conduction; organic layer; organic thin film transistors; pentacene deposition rate; pentacene transistors; Fabrication; Gold; Lithography; MOSFETs; Organic thin film transistors; Pentacene; Substrates; Surface treatment; Testing; Thin film transistors;
Conference_Titel :
International Semiconductor Conference, 2006
Conference_Location :
Sinaia
Print_ISBN :
1-4244-0109-7
DOI :
10.1109/SMICND.2006.284003