• DocumentCode
    3258
  • Title

    Post-CMOS and Post-MEMS Compatible Flexible Skin Technologies: A Review

  • Author

    Yong Xu

  • Author_Institution
    Electr. & Comput. Eng. Dept., Wayne State Univ., Detroit, MI, USA
  • Volume
    13
  • Issue
    10
  • fYear
    2013
  • fDate
    Oct. 2013
  • Firstpage
    3962
  • Lastpage
    3975
  • Abstract
    This paper reviews flexible skin technologies that enable monolithic integration of silicon CMOS circuits and high temperature MEMS devices on flexible substrates. The monolithic integration is achieved by fabricating CMOS circuits or MEMS sensors on silicon wafers first and then forming flexible skins by post-processing. In this sense, these flexible skin technologies are termed as post-CMOS and -MEMS compatible. Most flexible devices developed using these technologies share a common structure - silicon islands connected by flexible cables. Representative works in this field are reviewed. Important aspects such as materials, releasing methods, and interconnection methods are discussed. A brief comparison of post-CMOS and -MEMS compatible flexible skin technologies with other technologies is presented.
  • Keywords
    CMOS integrated circuits; elemental semiconductors; flexible electronics; microfabrication; microsensors; silicon; MEMS sensor fabrication; flexible cables; flexible devices; high-temperature MEMS devices; interconnection method; monolithic integration; post-CMOS compatible flexible skin technology; post-MEMS compatible flexible skin technology; releasing method; silicon CMOS circuit fabrication; silicon islands; silicon wafers; Flexible electronics; sensor arrays; silicon on insulator technology; wearable sensors;
  • fLanguage
    English
  • Journal_Title
    Sensors Journal, IEEE
  • Publisher
    ieee
  • ISSN
    1530-437X
  • Type

    jour

  • DOI
    10.1109/JSEN.2013.2262375
  • Filename
    6544579