DocumentCode
3258
Title
Post-CMOS and Post-MEMS Compatible Flexible Skin Technologies: A Review
Author
Yong Xu
Author_Institution
Electr. & Comput. Eng. Dept., Wayne State Univ., Detroit, MI, USA
Volume
13
Issue
10
fYear
2013
fDate
Oct. 2013
Firstpage
3962
Lastpage
3975
Abstract
This paper reviews flexible skin technologies that enable monolithic integration of silicon CMOS circuits and high temperature MEMS devices on flexible substrates. The monolithic integration is achieved by fabricating CMOS circuits or MEMS sensors on silicon wafers first and then forming flexible skins by post-processing. In this sense, these flexible skin technologies are termed as post-CMOS and -MEMS compatible. Most flexible devices developed using these technologies share a common structure - silicon islands connected by flexible cables. Representative works in this field are reviewed. Important aspects such as materials, releasing methods, and interconnection methods are discussed. A brief comparison of post-CMOS and -MEMS compatible flexible skin technologies with other technologies is presented.
Keywords
CMOS integrated circuits; elemental semiconductors; flexible electronics; microfabrication; microsensors; silicon; MEMS sensor fabrication; flexible cables; flexible devices; high-temperature MEMS devices; interconnection method; monolithic integration; post-CMOS compatible flexible skin technology; post-MEMS compatible flexible skin technology; releasing method; silicon CMOS circuit fabrication; silicon islands; silicon wafers; Flexible electronics; sensor arrays; silicon on insulator technology; wearable sensors;
fLanguage
English
Journal_Title
Sensors Journal, IEEE
Publisher
ieee
ISSN
1530-437X
Type
jour
DOI
10.1109/JSEN.2013.2262375
Filename
6544579
Link To Document