Title :
On-State Behaviour of Diamond M-i-P Structures
Author :
Brezeanu, Mihai ; Rashid, S.J. ; Amaratunga, G.A.J. ; Rupesinghe, N.L. ; Butler, T. ; Udrea, F. ; Brezeanu, G.
Author_Institution :
Dept. of Eng., Cambridge Univ.
Abstract :
Diamond Schottky power diodes are currently subject to extensive research. In this paper, the on-state capability of this type of structures is assessed. Measured forward characteristics for different temperatures are included and the use of gold, nickel and aluminium as Schottky metal is evaluated. A theoretical study regarding the influence of different doping profiles at the drift-substrate interface on the electrical performance of the device is also inserted
Keywords :
MIS structures; Schottky diodes; diamond; doping profiles; wide band gap semiconductors; M-i-P structures; Schottky metal; aluminium; diamond Schottky power diodes; doping profiles; drift-substrate interface; gold; nickel; Conductivity; Frequency; Gold; P-i-n diodes; Schottky barriers; Schottky diodes; Semiconductor diodes; Silicon carbide; Temperature; Wideband;
Conference_Titel :
International Semiconductor Conference, 2006
Conference_Location :
Sinaia
Print_ISBN :
1-4244-0109-7
DOI :
10.1109/SMICND.2006.284006
