• DocumentCode
    3258062
  • Title

    Photogenerated Currents in Pentacene Field Effect Transistors

  • Author

    Plugaru, R. ; Anghel, C. ; Ionescu, A.M.

  • Author_Institution
    Nat. Inst. for R&D in Microtechnol., IMT-Bucharest, Bucharest
  • Volume
    2
  • fYear
    2006
  • fDate
    27-29 Sept. 2006
  • Firstpage
    315
  • Lastpage
    318
  • Abstract
    This paper reports on organic FET transistors (OFETs) fabricated on silicon substrates using pentacene as active organic layer and gold as source and drain contacts. Photogenerated currents by a 625nm wavelength laser are experimentally observed. The observed light-induced increase of OFFT drain current by three-to-six orders of magnitude, depending on device operation and geometry suggests their potential for future light sensing applications. Bipolar conduction and electron trapping in pentacene films exposed to light are found responsible for some of the abnormal observed behaviors during experiments
  • Keywords
    field effect transistors; organic semiconductors; semiconductor thin films; 625 nm; bipolar conduction; drain current; electron trapping; gold; laser; light sensing applications; organic FET transistors; pentacene films; photogenerated currents; silicon substrates; source and drain contacts; Circuit testing; Costs; FETs; Fiber lasers; Gold; OFETs; Pentacene; Semiconductor lasers; Substrates; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    International Semiconductor Conference, 2006
  • Conference_Location
    Sinaia
  • Print_ISBN
    1-4244-0109-7
  • Type

    conf

  • DOI
    10.1109/SMICND.2006.284007
  • Filename
    4063235