DocumentCode
3258062
Title
Photogenerated Currents in Pentacene Field Effect Transistors
Author
Plugaru, R. ; Anghel, C. ; Ionescu, A.M.
Author_Institution
Nat. Inst. for R&D in Microtechnol., IMT-Bucharest, Bucharest
Volume
2
fYear
2006
fDate
27-29 Sept. 2006
Firstpage
315
Lastpage
318
Abstract
This paper reports on organic FET transistors (OFETs) fabricated on silicon substrates using pentacene as active organic layer and gold as source and drain contacts. Photogenerated currents by a 625nm wavelength laser are experimentally observed. The observed light-induced increase of OFFT drain current by three-to-six orders of magnitude, depending on device operation and geometry suggests their potential for future light sensing applications. Bipolar conduction and electron trapping in pentacene films exposed to light are found responsible for some of the abnormal observed behaviors during experiments
Keywords
field effect transistors; organic semiconductors; semiconductor thin films; 625 nm; bipolar conduction; drain current; electron trapping; gold; laser; light sensing applications; organic FET transistors; pentacene films; photogenerated currents; silicon substrates; source and drain contacts; Circuit testing; Costs; FETs; Fiber lasers; Gold; OFETs; Pentacene; Semiconductor lasers; Substrates; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
International Semiconductor Conference, 2006
Conference_Location
Sinaia
Print_ISBN
1-4244-0109-7
Type
conf
DOI
10.1109/SMICND.2006.284007
Filename
4063235
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