DocumentCode
3258116
Title
Temperature Analysis of Poly-Si TFTs Transfer Characteristics
Author
Michalas, L. ; Papaioannoua, G.J. ; Kouvatsos, Dimitrios N ; Voutsas, A.T.
Author_Institution
Dept. of Phys., National & Kapodistrian Univ. of Athens
Volume
2
fYear
2006
fDate
27-29 Sept. 2006
Firstpage
323
Lastpage
326
Abstract
A detailed analysis of poly-silicon thin film transistors transfer characteristics, in the linear operation regime, is presented. The temperature dependence of typical parameters, denote the grain boundaries influence on the electrical behaviour. Their presence was found to determine the device performance through thermal activation. The results provide a more quantitative relation between the electrical properties of TFTs and the polycrystalline material properties
Keywords
grain boundaries; silicon; thermal analysis; thin film transistors; Si; grain boundaries; poly-Si TFT; poly-silicon thin film transistors; temperature analysis; thermal activation; transfer characteristics; Channel bank filters; Grain boundaries; Laser sintering; Leakage current; Material properties; Physics; Temperature dependence; Temperature distribution; Thin film transistors; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
International Semiconductor Conference, 2006
Conference_Location
Sinaia
Print_ISBN
1-4244-0109-7
Type
conf
DOI
10.1109/SMICND.2006.284009
Filename
4063237
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