Title :
Temperature Analysis of Poly-Si TFTs Transfer Characteristics
Author :
Michalas, L. ; Papaioannoua, G.J. ; Kouvatsos, Dimitrios N ; Voutsas, A.T.
Author_Institution :
Dept. of Phys., National & Kapodistrian Univ. of Athens
Abstract :
A detailed analysis of poly-silicon thin film transistors transfer characteristics, in the linear operation regime, is presented. The temperature dependence of typical parameters, denote the grain boundaries influence on the electrical behaviour. Their presence was found to determine the device performance through thermal activation. The results provide a more quantitative relation between the electrical properties of TFTs and the polycrystalline material properties
Keywords :
grain boundaries; silicon; thermal analysis; thin film transistors; Si; grain boundaries; poly-Si TFT; poly-silicon thin film transistors; temperature analysis; thermal activation; transfer characteristics; Channel bank filters; Grain boundaries; Laser sintering; Leakage current; Material properties; Physics; Temperature dependence; Temperature distribution; Thin film transistors; Voltage;
Conference_Titel :
International Semiconductor Conference, 2006
Conference_Location :
Sinaia
Print_ISBN :
1-4244-0109-7
DOI :
10.1109/SMICND.2006.284009
