Deep level transient spectroscopy, photoreflection and time resolved photoluminescence spectra of self-assembled quantum dots

Author

Bala, W.

Author_Institution

Inst. of Phys., Nicholas Copernicus Univ., Torun, Poland

fYear

2001

fDate

2001

Firstpage

63

Abstract

Self-assembled quantum dots (QD) are attracting widespread interest due to the potential they offer in the device application such as low-threshold lasers, detectors and optical memory structures. We report on the electron-filling photoreflectance and photoluminescence investigation in the 1.5-3 eV photon energy range and at temperatures from 10 to 330 K on stacked layers of Si quantum dots. We observed clear and well-resolved structures, which we attribute to the optical response of different QD families. It is shown that Coulomb interaction can account for the observed optical response of QD families with different morphology coexisting in the semiconductor barrier

Keywords

deep level transient spectroscopy; elemental semiconductors; photoluminescence; photoreflectance; self-assembly; semiconductor quantum dots; silicon; time resolved spectra; visible spectra; 1.5 to 3 eV; 10 to 330 K; Coulomb interaction; Si; deep level transient spectroscopy; detectors; electron-filling photoreflectance; low-threshold lasers; morphology; optical memory structures; optical response; photon energy range; photoreflection; self-assembled quantum dots; semiconductor barrier; stacked layers; temperature; time resolved photoluminescence spectra; Capacitance measurement; Electron emission; Frequency; Optical sensors; Photoluminescence; Quantum capacitance; Quantum dot lasers; Quantum dots; Spectroscopy; Stimulated emission;

fLanguage

English

Publisher

ieee

Conference_Titel

Transparent Optical Networks, 2001. Proceedings of 2001 3rd International Conference on

Conference_Location

Cracow

Print_ISBN

0-7803-7096-1

Type

conf

DOI

10.1109/ICTON.2001.934719

Filename

934719