Termination Optimization for 4H-Sic p-i-n Diodes

Author

Boianceanu, C. ; Zekentes, K. ; Camara, N. ; Kayambaki, M. ; Rouet, W.

Author_Institution

IESL, Found. for Res. & Technol., Heraklion

Volume

2

fYear

2006

fDate

27-29 Sept. 2006

Firstpage

327

Lastpage

330

Abstract

As shown by the progresses made in recent years, SiC is an excellent semiconductor material for high frequency-high power applications. Devices required to operate at high voltage levels face the problem of high peak electric field in the vicinity of the junction edge due to electric field lines crowding. This paper is concerned with the termination optimization by 2D simulation of 4H-SiC diodes for microwave applications. For simulation purpose a comprehensive device model was setup. A limitation due to the targeted application is that the device area should not exceed 160mum. Two versions of the modified junction termination extension (MJTE) have been envisaged for the optimization of the reverse characteristics of the p-i-n diodes. The influence of the MJTE parameters on the breakdown voltage of the structure was studied

Keywords

microwave diodes; p-i-n diodes; silicon compounds; wide band gap semiconductors; 4H-SiC p-i-n diodes; SiC; breakdown voltage; modified junction termination extension; termination optimization; Doping; Electric breakdown; Etching; Frequency; Ionization; Microwave devices; Numerical simulation; P-i-n diodes; Semiconductor diodes; Silicon carbide;

fLanguage

English

Publisher

ieee

Conference_Titel

International Semiconductor Conference, 2006

Conference_Location

Sinaia

Print_ISBN

1-4244-0109-7

Type

conf

DOI

10.1109/SMICND.2006.284010

Filename

4063238