Title :
Functional optoelectronic properties of n-i-p-i superlattices and structures
Author :
Kononenko, Valerii K. ; Ushakov, Dmitrii V.
Author_Institution :
Stepanov Inst. of Phys, Acad. of Sci., Minsk, Byelorussia
Abstract :
A description of the electron energy structure and optical and electric parameters of doping superlattices is given and different physical phenomena and possible device applications are discussed. Previous results in the development of photodetectors, laser sources, optical modulators, and other doping superlattice structures are reviewed
Keywords :
band structure; optical properties; semiconductor quantum wells; semiconductor superlattices; device applications; doping superlattice structures; electric parameters; electron energy structure; energy potential profile; functional optoelectronic properties; laser sources; n-i-p-i structures; n-i-p-i superlattices; optical modulators; optical parameters; photodetectors; Crystals; Electron optics; Gallium arsenide; Laser theory; Nonlinear optics; Optical modulation; Optical superlattices; Periodic structures; Semiconductor device doping; Semiconductor superlattices;
Conference_Titel :
Transparent Optical Networks, 2001. Proceedings of 2001 3rd International Conference on
Conference_Location :
Cracow
Print_ISBN :
0-7803-7096-1
DOI :
10.1109/ICTON.2001.934720
