DocumentCode
3258165
Title
Functional optoelectronic properties of n-i-p-i superlattices and structures
Author
Kononenko, Valerii K. ; Ushakov, Dmitrii V.
Author_Institution
Stepanov Inst. of Phys, Acad. of Sci., Minsk, Byelorussia
fYear
2001
fDate
2001
Firstpage
64
Lastpage
67
Abstract
A description of the electron energy structure and optical and electric parameters of doping superlattices is given and different physical phenomena and possible device applications are discussed. Previous results in the development of photodetectors, laser sources, optical modulators, and other doping superlattice structures are reviewed
Keywords
band structure; optical properties; semiconductor quantum wells; semiconductor superlattices; device applications; doping superlattice structures; electric parameters; electron energy structure; energy potential profile; functional optoelectronic properties; laser sources; n-i-p-i structures; n-i-p-i superlattices; optical modulators; optical parameters; photodetectors; Crystals; Electron optics; Gallium arsenide; Laser theory; Nonlinear optics; Optical modulation; Optical superlattices; Periodic structures; Semiconductor device doping; Semiconductor superlattices;
fLanguage
English
Publisher
ieee
Conference_Titel
Transparent Optical Networks, 2001. Proceedings of 2001 3rd International Conference on
Conference_Location
Cracow
Print_ISBN
0-7803-7096-1
Type
conf
DOI
10.1109/ICTON.2001.934720
Filename
934720
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