Title :
Vector Discretization Schemes Based on Unstructured Neighborhood Information
Author :
Triebl, O. ; Grasser, T.
Author_Institution :
Christian Doppler Lab. for TCAD in Microelectron., Inst. for Microelectron., Wien
Abstract :
In TCAD environments, a proper vector discretization in two or three dimensions is an important issue. Physical models like the impact ionization rate depend on vector quantities. Two discretization methods for Delaunay meshes based only on the unstructured neighborhood information are presented. Overall good convergence is achieved by applying these methods in a TCAD environment for the calculation of the driving force vector as well as the current density vector. An example simulation of an nMOS transistor in snap-hack operation is presented
Keywords :
mesh generation; technology CAD (electronics); vectors; Delaunay meshes; TCAD environment; current density vector; driving force vector; unstructured neighborhood information; vector discretization schemes; Charge carrier processes; Convergence; Current density; Dielectrics; Differential equations; Electrons; Impact ionization; MOSFETs; Microelectronics; Partial differential equations;
Conference_Titel :
International Semiconductor Conference, 2006
Conference_Location :
Sinaia
Print_ISBN :
1-4244-0109-7
DOI :
10.1109/SMICND.2006.284013
