Vector Discretization Schemes Based on Unstructured Neighborhood Information

In TCAD environments, a proper vector discretization in two or three dimensions is an important issue. Physical models like the impact ionization rate depend on vector quantities. Two discretization methods for Delaunay meshes based only on the unstructured neighborhood information are presented. Overall good convergence is achieved by applying these methods in a TCAD environment for the calculation of the driving force vector as well as the current density vector. An example simulation of an nMOS transistor in snap-hack operation is presented