Title :
Film morphology of dibenzochrysene
Author :
Fujita, K. ; Kimura, M. ; Yoshokawa, H. ; Mori, T.
Author_Institution :
Grad. Sch. of Eng., Nagoya Univ., Nagoya
Abstract :
For organic field effect transistors (OFETs), pentacene is often used as a typical semiconductor material and reported to have as high carrier mobility as a-Si. Dibenzochrysene (DBC) as well as pentacene consist of only aromatic rings. DBC can be synthesized by simple procedure and has higher solubility than pentacene. We studied film morphology of DBC fabricated by deposition or spin-coating. It was found that the morphology of DBC film depended on a deposition rate. The films fabricated by the deposition rate of 0.002 nm/s and by spin-coating were island structure and amorphous, respectively. The morphology of DBC films changed with time. The post films showed higher crystalline than before. We also studied the effect of buffer layer on the suppression of molecular migration.
Keywords :
X-ray diffraction; atomic force microscopy; buffer layers; crystal structure; insulating thin films; island structure; organic field effect transistors; organic semiconductors; spin coating; vacuum deposited coatings; X-ray diffraction; amorphous films; atomic force microscopy; buffer layer effect; crystalline films; deposition rate; dibenzochrysene; film morphology; island structure; molecular migration suppression; organic field effect transistors; spin-coating; vacuum deposition; Atomic force microscopy; Buffer layers; Morphology; OFETs; Organic light emitting diodes; Organic thin film transistors; Pentacene; Semiconductor films; Thin film transistors; Wire;
Conference_Titel :
Electrical Insulating Materials, 2008. (ISEIM 2008). International Symposium on
Conference_Location :
Mie
Print_ISBN :
978-4-88686-005-7
Electronic_ISBN :
978-4-88686-006-4
DOI :
10.1109/ISEIM.2008.4664498
