• DocumentCode
    3258413
  • Title

    Physically based models of high power semiconductor devices for PSpice

  • Author

    Schroder, Stephan ; De Doncker, Rik W.

  • Author_Institution
    Inst. for Power Electron. & Electr. Drives, Tech. Hochschule Aachen, Germany
  • Volume
    1
  • fYear
    1999
  • fDate
    1999
  • Firstpage
    379
  • Abstract
    For the design of efficient and reliable converters, circuit simulation can be a powerful tool, if suitable semiconductor models exist. Unfortunately most of the commercially available circuit simulators do not have accurate models for high power semiconductors. Therefore, new device models are developed for power diodes and GTO-thyristors. They are based on semiconductor physics, which guarantees a wide range of validity. The models are programmed in the C++ language and are implemented in the widely used circuit simulator Microsim PSpice using the device equation options. The simulation results are compared with measurements
  • Keywords
    SPICE; power semiconductor diodes; semiconductor device models; thyristors; C++ language; GTO-thyristors; Microsim PSpice circuit simulator; PSpice; device equation options; high power semiconductor devices; power diodes; Anodes; Charge carrier processes; Circuit simulation; Computational modeling; Differential equations; Physics; Power electronics; Power semiconductor devices; SPICE; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Industry Applications Conference, 1999. Thirty-Fourth IAS Annual Meeting. Conference Record of the 1999 IEEE
  • Conference_Location
    Phoenix, AZ
  • ISSN
    0197-2618
  • Print_ISBN
    0-7803-5589-X
  • Type

    conf

  • DOI
    10.1109/IAS.1999.799984
  • Filename
    799984