DocumentCode
3258413
Title
Physically based models of high power semiconductor devices for PSpice
Author
Schroder, Stephan ; De Doncker, Rik W.
Author_Institution
Inst. for Power Electron. & Electr. Drives, Tech. Hochschule Aachen, Germany
Volume
1
fYear
1999
fDate
1999
Firstpage
379
Abstract
For the design of efficient and reliable converters, circuit simulation can be a powerful tool, if suitable semiconductor models exist. Unfortunately most of the commercially available circuit simulators do not have accurate models for high power semiconductors. Therefore, new device models are developed for power diodes and GTO-thyristors. They are based on semiconductor physics, which guarantees a wide range of validity. The models are programmed in the C++ language and are implemented in the widely used circuit simulator Microsim PSpice using the device equation options. The simulation results are compared with measurements
Keywords
SPICE; power semiconductor diodes; semiconductor device models; thyristors; C++ language; GTO-thyristors; Microsim PSpice circuit simulator; PSpice; device equation options; high power semiconductor devices; power diodes; Anodes; Charge carrier processes; Circuit simulation; Computational modeling; Differential equations; Physics; Power electronics; Power semiconductor devices; SPICE; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Industry Applications Conference, 1999. Thirty-Fourth IAS Annual Meeting. Conference Record of the 1999 IEEE
Conference_Location
Phoenix, AZ
ISSN
0197-2618
Print_ISBN
0-7803-5589-X
Type
conf
DOI
10.1109/IAS.1999.799984
Filename
799984
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