DocumentCode
3259077
Title
Device Degradation Associated With Pre-amorphization Of The Ti Salicide Process
Author
Tsai, Jiunn-Yann ; Yeh, Stanley W C
fYear
1997
fDate
3-5 June 1997
Firstpage
28
Lastpage
33
Keywords
CMOS technology; Degradation; Implants; Large scale integration; Logic devices; Rapid thermal annealing; Research and development; Silicidation; Silicides; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, Systems, and Applications, 1997. Proceedings of Technical Papers. 1997 International Symposium on
Conference_Location
Taipei, Taiwan
ISSN
1524-766X
Print_ISBN
0-7803-4131-7
Type
conf
DOI
10.1109/VTSA.1997.614720
Filename
614720
Link To Document