3259077

Device Degradation Associated With Pre-amorphization Of The Ti Salicide Process

Tsai, Jiunn-Yann ; Yeh, Stanley W C

1997

3-5 June 1997

28

33

CMOS technology; Degradation; Implants; Large scale integration; Logic devices; Rapid thermal annealing; Research and development; Silicidation; Silicides; Threshold voltage;

English

ieee

VLSI Technology, Systems, and Applications, 1997. Proceedings of Technical Papers. 1997 International Symposium on

Taipei, Taiwan

1524-766X

0-7803-4131-7

conf

10.1109/VTSA.1997.614720

614720