Focused ion beam sample preparation for high spatial resolution X-ray microanalysis

Author

Pey, KL ; Leslie, Alan J.

Author_Institution

Inst. of Microelectron., Singapore

fYear

1995

fDate

27 Nov-1 Dec 1995

Firstpage

40

Lastpage

48

Abstract

Thin slices of Si integrated circuit samples of about 100 nm to a couple of hundred nanometers containing process related defects have been prepared by focused ion beam (FIB) for high spatial resolution X-ray microanalysis. The X-ray signals from the bulk are minimised to enhance the signal-to-background ratio of the defects which are in the sub-micron range. The experimental results were also compared to those by a Monte Carlo simulation

Keywords

X-ray chemical analysis; failure analysis; focused ion beam technology; integrated circuit measurement; integrated circuit reliability; silicon; specimen preparation; FIB sample preparation; Si; Si integrated circuit samples; X-ray microanalysis; contamination analysis; defect analysis; focused ion beam technique; high spatial resolution microanalysis; process related defects; submicron range defects; Brightness; Dispersion; Electron beams; Electron emission; Ion beams; Light scattering; Signal generators; Spatial resolution; Spectroscopy; X-ray scattering;

fLanguage

English

Publisher

ieee

Conference_Titel

Physical and Failure Analysis of Integrated Circuits, 1995., Proceedings of the 1995 5th International Symposium on the

Print_ISBN

0-7803-2797-7

Type

conf

DOI

10.1109/IPFA.1995.487593

Filename

487593