DocumentCode
3259351
Title
Imaging of charging specimens at high beam energies in the SEM
Author
Wong, WK ; Phang, JCH ; Thong, JTL
Author_Institution
Fac. of Eng., Nat. Univ. of Singapore, Singapore
fYear
1995
fDate
27 Nov-1 Dec 1995
Firstpage
55
Lastpage
59
Abstract
This paper describes a novel method to observe charging specimens at high beam voltages without specimen preparation. It was found that the technique greatly reduces charging artifacts such as raster faults, discharge streaks, astigmatism and defocussing without sacrificing image quality. Images obtained of uncoated specimens are found to be comparable to gold-coated specimens and without charging effects
Keywords
failure analysis; integrated circuit measurement; integrated circuit testing; scanning electron microscopy; surface charging; IC testing; SEM; astigmatism; beam energies; charging artifacts; charging specimens; defocussing; discharge streaks; image quality; raster faults; Electron beams; Electron emission; Failure analysis; Image quality; Insulation; Low voltage; Reliability engineering; Scanning electron microscopy; Vacuum technology; Vision defects;
fLanguage
English
Publisher
ieee
Conference_Titel
Physical and Failure Analysis of Integrated Circuits, 1995., Proceedings of the 1995 5th International Symposium on the
Print_ISBN
0-7803-2797-7
Type
conf
DOI
10.1109/IPFA.1995.487595
Filename
487595
Link To Document