Title :
Guard ring diodes for suppression of substrate noise and improved reliability in mixed-mode CMOS circuits
Author :
Forbes, L. ; Lim, W.T. ; Yan, K.T.
Author_Institution :
Dept. of Electr. & Comput. Eng., Oregon State Univ., Corvallis, OR, USA
fDate :
27 Nov-1 Dec 1995
Abstract :
Forward biased n+ guard ring diodes are used to generate a relatively large on-chip capacitance. This variable capacitance is resonated with the normal substrate lead inductance to form a very low impedance path to ground. In this manner, substrate noise in mixed signal CMOS integrated circuits can be suppressed resulting in less noise and improved reliability in analog portions of the mixed mode circuits
Keywords :
CMOS integrated circuits; capacitance; integrated circuit noise; integrated circuit reliability; interference suppression; mixed analogue-digital integrated circuits; semiconductor diodes; CMOS integrated circuits; forward biased n+ diodes; guard ring diodes; mixed-mode CMOS circuits; onchip capacitance; reliability; substrate lead inductance; substrate noise suppression; variable capacitance; Capacitance; Circuit simulation; Diodes; Impedance; Inductance; Integrated circuit noise; Power supplies; RLC circuits; Resonance; Substrates;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits, 1995., Proceedings of the 1995 5th International Symposium on the
Print_ISBN :
0-7803-2797-7
DOI :
10.1109/IPFA.1995.487613
