Title :
A study of the influence of inter-metal dielectrics on electromigration performance
Author :
Foley, Sean ; Ryan, Anne ; Martin, David ; Mathewson, Alan
Author_Institution :
Nat. Microelectron. Res. Centre, Cork, Ireland
fDate :
27 Nov-1 Dec 1995
Abstract :
The relative electromigration performance of test structures with a common Ti/TiN-Al-1%Cu-TiN metallization scheme and with three different inter-metal-dielectric (IMD) layers above an interconnect test line are compared. Differences in lifetimes are observed which are attributable to the influences of the different IMD layers. The IMD layers in question are (A) Polyimide, (B) a flexible inorganic dielectric layer and (C) a rigid inorganic dielectric layer. A matrix of conventional electromigration tests have been carried out. The possible influence of stress migration is investigated and an explanation for the relative behaviour is proposed
Keywords :
dielectric thin films; electromigration; integrated circuit metallisation; integrated circuit reliability; polymer films; Ti-TiN-AlCu-TiN; electromigration performance; electromigration tests; flexible inorganic dielectric layer; inter-metal dielectrics; lifetimes; metallization scheme; polyimide; rigid inorganic dielectric layer; stress migration; Artificial intelligence; Condition monitoring; Conductors; Dielectrics; Electromigration; Metallization; Polyimides; Semiconductor device testing; Stress; Tin;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits, 1995., Proceedings of the 1995 5th International Symposium on the
Print_ISBN :
0-7803-2797-7
DOI :
10.1109/IPFA.1995.487615
