A study of the influence of inter-metal dielectrics on electromigration performance

Author

Foley, Sean ; Ryan, Anne ; Martin, David ; Mathewson, Alan

Author_Institution

Nat. Microelectron. Res. Centre, Cork, Ireland

fYear

1995

fDate

27 Nov-1 Dec 1995

Firstpage

155

Lastpage

160

Abstract

The relative electromigration performance of test structures with a common Ti/TiN-Al-1%Cu-TiN metallization scheme and with three different inter-metal-dielectric (IMD) layers above an interconnect test line are compared. Differences in lifetimes are observed which are attributable to the influences of the different IMD layers. The IMD layers in question are (A) Polyimide, (B) a flexible inorganic dielectric layer and (C) a rigid inorganic dielectric layer. A matrix of conventional electromigration tests have been carried out. The possible influence of stress migration is investigated and an explanation for the relative behaviour is proposed

Keywords

dielectric thin films; electromigration; integrated circuit metallisation; integrated circuit reliability; polymer films; Ti-TiN-AlCu-TiN; electromigration performance; electromigration tests; flexible inorganic dielectric layer; inter-metal dielectrics; lifetimes; metallization scheme; polyimide; rigid inorganic dielectric layer; stress migration; Artificial intelligence; Condition monitoring; Conductors; Dielectrics; Electromigration; Metallization; Polyimides; Semiconductor device testing; Stress; Tin;

fLanguage

English

Publisher

ieee

Conference_Titel

Physical and Failure Analysis of Integrated Circuits, 1995., Proceedings of the 1995 5th International Symposium on the

Print_ISBN

0-7803-2797-7

Type

conf

DOI

10.1109/IPFA.1995.487615

Filename

487615