DocumentCode
3259906
Title
Ridge-type semiconductor lasers with antiguiding cladding layers for horizontal transverse modes
Author
Takada, Hiroo ; Numai, Takahiro
Author_Institution
Dept. of Electr. & Electron. Eng., Ritsumeikan Univ., Kusatsu, Japan
fYear
2009
fDate
23-26 Jan. 2009
Firstpage
1
Lastpage
6
Abstract
To suppress lasing in higher-order transverse modes and improve kink levels in ridge-type 980-nm fiber pump semiconductor lasers, a novel ridge structure with antiguiding cladding layers for horizontal transverse modes is proposed, and lasing characteristics are theoretically analyzed. In the proposed ridge structure, kink levels are improved by suppressing spatial hole burning and lowering optical gains for higher-order transverse modes, with an increase in the step d of the antiguiding cladding layers, which are located at both sides of a mesa. For d=100-230 nm, kink-free laser operation is obtained up to the injected current of 2 A.
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; laser modes; optical fibre cladding; optical hole burning; optical pumping; quantum well lasers; AlGaAs-AlGaAs-InGaAs; antiguiding cladding layers; current 2 A; fiber pump semiconductor lasers; higher-order transverse modes; horizontal transverse modes; kink level; optical gain; ridge-type semiconductor lasers; spatial hole burning; wavelength 980 nm; Erbium-doped fiber lasers; Laser excitation; Laser modes; Laser theory; Optical refraction; Optical variables control; Power lasers; Pump lasers; Refractive index; Semiconductor lasers; antiguiding; kink; ridge; semiconductor laser; transverse mode;
fLanguage
English
Publisher
ieee
Conference_Titel
TENCON 2009 - 2009 IEEE Region 10 Conference
Conference_Location
Singapore
Print_ISBN
978-1-4244-4546-2
Electronic_ISBN
978-1-4244-4547-9
Type
conf
DOI
10.1109/TENCON.2009.5396230
Filename
5396230
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