Rolled-up 1.5 µm InAs quantum dot tube lasers and integrated nanophotonic circuits on Si

In this paper, rolled-up semiconductor tube optical cavities, formed when coherently strained nanomembranes are selectively released from the host substrate, have emerged as a promising approach to realize high performance lasers on Si. 1-3 We have investigated the design, fabrication, and characterization of InAs/InGaAsP quantum dot tube lasers. We report the first demonstration of semiconductor tube lasers that can operate at the telecom wavelength (- 1.5 μm). Such devices can exhibit an extremely low threshold (- 1.26 μW) and multiple emission wavelengths. The direct integration of quantum dot tube devices with Si waveguides has also been demonstrated.