Nonlinear properties of gallium arsenide and silicon FET-based RF and microwave switches

Author

Caverly, Robert H.

Author_Institution

Dept. of Electr. & Comput. Eng., Villanova Univ., PA, USA

Volume

4

fYear

1998

fDate

31 May-3 Jun 1998

Firstpage

337

Abstract

An important parameter for RF and microwave system design is the prediction of distortion produced by system components. This paper presents the results of a study on modeling the distortion produced by silicon and gallium arsenide RF and microwave switches. Exact relationships for the second and third order intercept point as a function of FET parameters are presented. The results indicate that both types of FET-based switches have higher levels of distortion at low frequencies. The distortion improves at frequencies above the gate bias circuit cutoff frequency, although the distortion improvement is lower for the MOSFET-based switch

Keywords

III-V semiconductors; MOSFET; Schottky gate field effect transistors; electric distortion; elemental semiconductors; field effect transistor switches; gallium arsenide; microwave devices; silicon; FET parameters; GaAs; III-V semiconductors; MOSFET-based switch; RF switches; Si; distortion; gate bias circuit cutoff frequency; intercept point; microwave switches; nonlinear properties; Communication switching; Gallium arsenide; Insertion loss; MESFETs; Microwave FETs; Nonlinear distortion; Radio frequency; Silicon; Switches; Switching circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 1998. ISCAS '98. Proceedings of the 1998 IEEE International Symposium on

Conference_Location

Monterey, CA

Print_ISBN

0-7803-4455-3

Type

conf

DOI

10.1109/ISCAS.1998.698836

Filename

698836