Title :
Low voltage, 2×2, 25 Gb/s crosspoint switch in InP-HBT technology
Author :
Mokhtari, M. ; Kerzer, B. ; Juhola, Z. ; Schuppener, G. ; Tenhunen, H. ; Swahn, T. ; Walden, R.
Author_Institution :
Dept. of Electron., R. Inst. of Technol., Stockholm, Sweden
fDate :
31 May-3 Jun 1998
Abstract :
A none-blocking asynchronous 2×2 crosspoint switch in InP-HBT technology has been designed fabricated and characterized. Open eye-diagrams have been recorded to 25 Gb/s. Small signal measurements show potential for even higher bit rate operation. BER-measurements at 20 Gb/s show no erroneous transmission. The circuit is operational at 2 V supply voltage, with a current consumption of 120 mA, including the 50 ohm drivers
Keywords :
III-V semiconductors; bipolar integrated circuits; electronic switching systems; frequency-domain analysis; indium compounds; 120 mA; 2 V; 20 Gbit/s; 25 Gbit/s; 50 ohm; BER-measurements; HBT technology; InP; WDM; frequency domain measurements; low voltage; none-blocking asynchronous crosspoint switch; open eye-diagrams; small signal measurements; Bit rate; Driver circuits; High-speed electronics; Integrated circuit interconnections; Isolation technology; Laboratories; Low voltage; Microwave technology; Semiconductor device measurement; Switches;
Conference_Titel :
Circuits and Systems, 1998. ISCAS '98. Proceedings of the 1998 IEEE International Symposium on
Conference_Location :
Monterey, CA
Print_ISBN :
0-7803-4455-3
DOI :
10.1109/ISCAS.1998.698870
