In-flight and ground testing of single event upset sensitivity in static RAMs

Author

Johansson, K. ; Dyreklev, Peter ; Granbom, Bo ; Calvet, M. Catherine ; Fourtine, Stephane ; Feuillatre, Odile

Author_Institution

Ericsson Saab Avionics AB, Linkoping, Sweden

fYear

1997

fDate

15-19 Sep 1997

Firstpage

584

Lastpage

588

Abstract

This paper presents the results from in-flight measurements of single event upsets (SEU) in static random access memories (SRAM) caused by the atmospheric radiation environment at aircraft altitudes. The memory devices were carried on commercial airlines at high altitude and mainly high latitudes. The SEUs were monitored by a Component Upset Test Equipment (CUTE), designed for this experiment. The in flight results are compared to ground based testing with neutrons from three different sources

Keywords

SRAM chips; avionics; cosmic ray interactions; integrated circuit testing; neutron effects; SRAM; aircraft semiconductor electronics; atmospheric radiation environment; component upset test equipment; cosmic ray neutron irradiation; ground testing; in-flight testing; single event upset; static random access memory; Aerospace electronics; Aircraft; Atmospheric measurements; Neutrons; Random access memory; Read-write memory; SRAM chips; Single event upset; Test equipment; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Radiation and Its Effects on Components and Systems, 1997. RADECS 97. Fourth European Conference on

Conference_Location

Cannes

Print_ISBN

0-7803-4071-X

Type

conf

DOI

10.1109/RADECS.1997.699010

Filename

699010