DocumentCode
3260892
Title
Ge/SiGe quantum well asymmetric Fabry-Perot modulators on silicon substrates
Author
Audet, Ross M. ; Edwards, Elizabeth H. ; Balram, Krishna ; Rong, Yue ; Harris, James S. ; Miller, David A. B.
Author_Institution
Dept. of Electr. Eng., Stanford Univ., Stanford, CA, USA
fYear
2013
fDate
8-10 July 2013
Firstpage
248
Lastpage
249
Abstract
We demonstrate vertical-incidence Ge/SiGe quantum well modulators, fabricated directly on silicon, for free-space chip-to-chip optical interconnects. The devices exhibit greater than 10 dB extinction ratio, low insertion loss, and 2 Gb/s operation.
Keywords
Ge-Si alloys; elemental semiconductors; extinction coefficients; germanium; integrated optoelectronics; optical fabrication; optical losses; optical modulation; semiconductor quantum wells; Ge-SiGe; Si; bit rate 2 Gbit/s; extinction ratio; free-space chip-to-chip optical interconnects; insertion loss; silicon substrates; vertical-incidence quantum well asymmetric Fabry-Perot modulators; Absorption; Cavity resonators; Epitaxial growth; Fabry-Perot; Modulation; Silicon; Silicon germanium;
fLanguage
English
Publisher
ieee
Conference_Titel
Photonics Society Summer Topical Meeting Series, 2013 IEEE
Conference_Location
Waikoloa, HI
Print_ISBN
978-1-4673-5059-4
Type
conf
DOI
10.1109/PHOSST.2013.6614532
Filename
6614532
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