Title :
Ge/SiGe quantum well asymmetric Fabry-Perot modulators on silicon substrates
Author :
Audet, Ross M. ; Edwards, Elizabeth H. ; Balram, Krishna ; Rong, Yue ; Harris, James S. ; Miller, David A. B.
Author_Institution :
Dept. of Electr. Eng., Stanford Univ., Stanford, CA, USA
Abstract :
We demonstrate vertical-incidence Ge/SiGe quantum well modulators, fabricated directly on silicon, for free-space chip-to-chip optical interconnects. The devices exhibit greater than 10 dB extinction ratio, low insertion loss, and 2 Gb/s operation.
Keywords :
Ge-Si alloys; elemental semiconductors; extinction coefficients; germanium; integrated optoelectronics; optical fabrication; optical losses; optical modulation; semiconductor quantum wells; Ge-SiGe; Si; bit rate 2 Gbit/s; extinction ratio; free-space chip-to-chip optical interconnects; insertion loss; silicon substrates; vertical-incidence quantum well asymmetric Fabry-Perot modulators; Absorption; Cavity resonators; Epitaxial growth; Fabry-Perot; Modulation; Silicon; Silicon germanium;
Conference_Titel :
Photonics Society Summer Topical Meeting Series, 2013 IEEE
Conference_Location :
Waikoloa, HI
Print_ISBN :
978-1-4673-5059-4
DOI :
10.1109/PHOSST.2013.6614532
