Title :
High quality InGaP micropillars directly grown on silicon
Author :
Hao Sun ; Fan Ren ; Thai Tran ; Kar Wei Ng ; Kun Li ; Chang-Hasnain, Connie J.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci. & Appl. Sci. & Technol., Univ. of California, Berkeley, Berkeley, CA, USA
Abstract :
High quality lattice-mismatched micron-sized InGaP pillars directly grown on silicon are studied using time-resolved photoluminescence. Micropillars with single-crystalline wurtzite phase exhibit bright photoluminescence and very long lifetimes, promising for optoelectronic devices and solar cell applications.
Keywords :
III-V semiconductors; carrier lifetime; gallium compounds; indium compounds; nanofabrication; nanostructured materials; photoluminescence; semiconductor growth; time resolved spectra; InGaP; Si; bright photoluminescence; carrier lifetimes; high quality lattice-mismatched micron-sized pillars; high quality micropillars; optoelectronic devices; silicon substrates; single-crystalline wurtzite phase; solar cell applications; time-resolved photoluminescence; Laser excitation; Nanowires; Photovoltaic cells; Pump lasers; Radiative recombination; Silicon;
Conference_Titel :
Photonics Society Summer Topical Meeting Series, 2013 IEEE
Conference_Location :
Waikoloa, HI
Print_ISBN :
978-1-4673-5059-4
DOI :
10.1109/PHOSST.2013.6614534
