Title :
Low temperature CMOS VLSI technologies
Author :
Wilczynski, Joerg
Author_Institution :
IBM Deutschland GmbH, Boeblingen, West Germany
Abstract :
The author presents results from compute simulations describing the general characteristics of silicon semiconductor devices in the temperature range from 80 K to 330 K. On the basis of a 0.5-μm-channel low-temperature CMOS process model, the current-voltage characteristics of n- and p-FET transistors are presented. The performance of n- and p-FETs, a 2-WAY-NAND, a 2-WAY-NOR, and an 8K-memory array are calculated as a function of temperature. The performance improvement of CMOS circuits operating at 80 K over operation at 330 K was found to be a factor of two
Keywords :
CMOS integrated circuits; VLSI; electronic engineering computing; 2-WAY-NAND; 2-WAY-NOR; 80 to 330 K; FET; Si; Si semiconductor devices; compute simulations; current-voltage characteristics; low temperature CMOS VLSI; CMOS process; CMOS technology; Circuits; Computational modeling; Current-voltage characteristics; Semiconductor device modeling; Semiconductor devices; Silicon; Temperature distribution; Very large scale integration;
Conference_Titel :
CompEuro '89., 'VLSI and Computer Peripherals. VLSI and Microelectronic Applications in Intelligent Peripherals and their Interconnection Networks', Proceedings.
Conference_Location :
Hamburg
Print_ISBN :
0-8186-1940-6
DOI :
10.1109/CMPEUR.1989.93487
