DocumentCode
3261147
Title
Processing and Defect Control in Advanced Ge Technologies
Author
Claeys, C. ; Simoen, E. ; Satta, A. ; Opsomer, K. ; Meuris, M.
Author_Institution
E.E. Dept., KU Leuven, Kasteelpark Arenberg 10, B-3001 Leuven, Belgium
fYear
2007
fDate
3-4 June 2007
Firstpage
1
Lastpage
7
Abstract
To achieve the required drive performance for sub 32 nm technology nodes there is strong interest in exploring the use of Ge-based technologies. This paper reviews some important processing aspects from a defect control viewpoint. Attention is given to crystal growth, shallow junction formation and germanidation techniques, respectively. The main focus is on defect related aspects. The last section deals with the device performance and the impact of processing on device leakage current and low frequency noise behavior.
Keywords
CMOS technology; Crystals; Dielectric substrates; Fabrication; Infrared detectors; Integrated circuit technology; Leakage current; Low-frequency noise; Process control; Silicon; Ge technology; LF noise; defect control; device performance; germanidation; leakage current; shallow junctions;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices and Semiconductor Technology, 2007. EDST 2007. Proceeding of 2007 International Workshop on
Conference_Location
Tsinghua University
Print_ISBN
1-4244-1098-3
Electronic_ISBN
1-4244-1098-3
Type
conf
DOI
10.1109/EDST.2007.4289767
Filename
4289767
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