Resistive switching characteristics of epitaxial La0.67Sr0.33MnO3 films for nonvolatile memory applications

Author

Huang, Lina ; Qu, Bingjun ; Liu, Litian

Author_Institution

Institute of Microelectronics, Tsinghua University, Beijing 100084, China. Email: huangln04@mails.thu.edu.cn

fYear

2007

fDate

3-4 June 2007

Firstpage

86

Lastpage

88

Abstract

The nonvolatile and reversible resistive switching characteristics of epitaxial La0.67Sr0.33MnO3 films prepared by a pulsed laser deposition (PLD) technique were investigated. Clear resistance switching cycles were observed at room temperature under voltage pulses of ~100ns duration. Reproducible switching properties, involving low write threshold voltage, active pulse width window and long endurance lifetime, demonstrate well controllability with respect to future nonvolatile random access memory applications.

Keywords

Electric resistance; Laser ablation; Nonvolatile memory; Optical pulses; Pulsed laser deposition; Random access memory; Read-write memory; Space vector pulse width modulation; Temperature; Voltage; Electric-pulse-induced; La0.67Sr0.33MnO3; pulsed laser deposition (PLD); random access memory; resistive switching;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Semiconductor Technology, 2007. EDST 2007. Proceeding of 2007 International Workshop on

Conference_Location

Tsinghua University

Print_ISBN

1-4244-1098-3

Electronic_ISBN

1-4244-1098-3

Type

conf

DOI

10.1109/EDST.2007.4289784

Filename

4289784