Development of the high voltage e-beam lithography system

Author

Ren, Zheng ; Li, Qunqing ; Han, Li

Author_Institution

Tsinghua-Foxconn Nanotechnology Research Center, Department of Physics, Tsinghua University, Beijing, P.R. China 100084

fYear

2007

fDate

3-4 June 2007

Firstpage

114

Lastpage

116

Abstract

High voltage electron beam lithography has a number of advantages over conventional 50kV-voltage e-beam lithography systems, such as reducing proximity effect, reducing line-width variation, and obtaining high aspect ratios of line height to gap width. The new high voltage e-beam lithography system is based on a JEOL JEM2000EX Transmission Electron Microscope (TEM) with scanning system. As the sample is immersed in the high intensity magnetic field during the exposure process, the movement of electrons in the resist and substrate is limited in a smaller area. By using this system to carry out some exposure experiments, we have obtained the structure with 10:1 high-width aspect ratio on a 3-micron-thick PMMA layer with a large area.

Keywords

Acceleration; Etching; Fabrication; Lenses; Lithography; Micromechanical devices; Proximity effect; Resists; Transmission electron microscopy; Voltage; High Voltage E-beam Lithography; PMMA; Thick Resist; Transmission Electron Microscope;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Semiconductor Technology, 2007. EDST 2007. Proceeding of 2007 International Workshop on

Conference_Location

Tsinghua University

Print_ISBN

1-4244-1098-3

Electronic_ISBN

1-4244-1098-3

Type

conf

DOI

10.1109/EDST.2007.4289791

Filename

4289791