Study on Field Emission from Hafnium Oxynitride Prepared by DC Sputtering

Author

Duan, H.G. ; Xie, E.Q. ; Ye, F. ; Jiang, R.

Author_Institution

School of Physical Science and Technology, Lanzhou University, Lanzhou, 730000, People´´s Republic of China

fYear

2007

fDate

3-4 June 2007

Firstpage

137

Lastpage

140

Abstract

Hafnium oxynitride films were prepared by direct current sputtering with subsequently annealed in atmosphere air. Their field emission characteristics were investigated. Low turn-on field, high field emission current density, and very good field emission stability were showed, which can be attributed to their electrically nanostructured heterogeneous frame in the hafnium oxynitride. High voltage activation played a critical role in improving the field emission of HfOxNy which was thought that the chemical structure and the surface character of the samples were changed when at high voltage. The field emission mechanism for HfOxNy accords very well with the classical Fowler-Nordheim tunneling theory.

Keywords

Annealing; Cathodes; Current density; Dielectric materials; Hafnium; Semiconductor films; Semiconductor materials; Silicon; Sputtering; Voltage; Field emission; HfOxNy; High voltage activation;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Semiconductor Technology, 2007. EDST 2007. Proceeding of 2007 International Workshop on

Conference_Location

Tsinghua University

Print_ISBN

1-4244-1098-3

Electronic_ISBN

1-4244-1098-3

Type

conf

DOI

10.1109/EDST.2007.4289797

Filename

4289797