Title :
The degradation of reading performance in SONOS Flash Memory with small threshold voltage window
Author :
Shi, Kai ; Xu, Ming-Zhen ; Tan, Chang-Hua
Author_Institution :
Department of Microelectronics, Peking University, Beijing, 100871, China
Abstract :
In this paper, the threshold current was presented as a referential current of the bit-line to characterize the degradation of reading performances in SONOS flash memory with small threshold voltage window. The threshold current did not need any additional measurements, its feasibility was validated by both experiments and calculations, and it was more sensitive to the degradation of reading performances than the threshold voltage. And the degradation of reading performances was related to the generated interface traps.
Keywords :
Charge measurement; Current measurement; Degradation; Flash memory; Monitoring; SONOS devices; Space vector pulse width modulation; Stress; Threshold current; Threshold voltage; Flash memory; SONOS; reading current; threshold current; threshold voltage;
Conference_Titel :
Electron Devices and Semiconductor Technology, 2007. EDST 2007. Proceeding of 2007 International Workshop on
Conference_Location :
Tsinghua University
Print_ISBN :
1-4244-1098-3
Electronic_ISBN :
1-4244-1098-3
DOI :
10.1109/EDST.2007.4289798