Electron wavefunction penetration into gate dielectric and interface scattering-an alternative to surface roughness scattering model

Author

Polishchuk, I. ; Chenming Hu

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA

fYear

2001

fDate

12-14 June 2001

Firstpage

51

Lastpage

52

Abstract

A quantum mechanical (QM) simulator was used to determine the amount of carrier wavefunction penetration into gate dielectric. The amount of penetration affects the inversion charge density Q/sub inv/, inversion charge centroid, and most importantly carrier mobility. It is shown that interface scattering due to wavefunction penetration is in better agreement with the universal mobility data than the surface roughness scattering mechanism. The interface scattering allows the extension of the universal mobility model from SiO/sub 2/ to high-K gate dielectrics.

Keywords

MIS structures; dielectric thin films; electron mobility; interface states; inversion layers; permittivity; surface scattering; wave functions; SiO/sub 2/ gate dielectrics; SiO/sub 2/-Si; carrier mobility; carrier wavefunction penetration; electron wavefunction penetration; gate dielectric; high-K gate dielectrics; interface scattering; inversion charge centroid; inversion charge density; quantum mechanical simulator; surface roughness scattering model; universal mobility data; universal mobility model; wavefunction penetration; Amorphous materials; Electron mobility; High-K gate dielectrics; Oxidation; Particle scattering; Quantum mechanics; Rough surfaces; Surface roughness; Surface waves; Wave functions;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 2001. Digest of Technical Papers. 2001 Symposium on

Conference_Location

Kyoto, Japan

Print_ISBN

4-89114-012-7

Type

conf

DOI

10.1109/VLSIT.2001.934942

Filename

934942