Investigations of bulk dynamic threshold-voltage MOSFET with 65 GHz "normal-mode" f/sub t/ and 220 GHz "over-drive mode" f/sub t/ for RF applications

Author

Chun-Yen Chang ; Jiong-Guang Su ; Heng-Ming Hsu ; Shyh-Chyi Wong ; Tiao-Yuan Huang ; Yuan-Chen Sun

Author_Institution

Inst. of Electron., Nat. Chiao Tung Univ., Hsinchu, Taiwan

fYear

2001

fDate

12-14 June 2001

Firstpage

89

Lastpage

90

Abstract

The RF properties of bulk dynamic threshold-voltage MOSFET (B-DTMOS) with deep n-well isolation was investigated both under the normal DTMOS mode and two newly-proposed DTMOS operation modes: moderate (0.6 V0.85 V) modes. While f/sub t/ can be improved to 65 GHz at 12.5 mA with 1.5 V V/sub ds/ bias under normal mode DTMOS operation, a high f/sub t/ of 220 GHz with good linearity and stability is achieved under over-drive operation mode.

Keywords

CMOS integrated circuits; MOSFET; field effect MMIC; isolation technology; microwave field effect transistors; semiconductor device measurement; stability; 0.6 to 0.85 V; 1.5 V; 12.5 mA; 220 GHz; 65 GHz; B-DTMOS; DTMOS operation modes; RF applications; RF properties; bulk dynamic threshold-voltage MOSFET; deep n-well isolation; linearity; normal DTMOS mode; normal mode DTMOS operation; normal-mode; over-drive mode; over-drive operation mode; stability; Bandwidth; Bipolar transistors; Capacitance; Diodes; Linearity; MOSFET circuits; Power generation; Radio frequency; Radiofrequency amplifiers; Stability;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 2001. Digest of Technical Papers. 2001 Symposium on

Conference_Location

Kyoto, Japan

Print_ISBN

4-89114-012-7

Type

conf

DOI

10.1109/VLSIT.2001.934961

Filename

934961