Title :
Investigations of bulk dynamic threshold-voltage MOSFET with 65 GHz "normal-mode" f/sub t/ and 220 GHz "over-drive mode" f/sub t/ for RF applications
Author :
Chun-Yen Chang ; Jiong-Guang Su ; Heng-Ming Hsu ; Shyh-Chyi Wong ; Tiao-Yuan Huang ; Yuan-Chen Sun
Author_Institution :
Inst. of Electron., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
The RF properties of bulk dynamic threshold-voltage MOSFET (B-DTMOS) with deep n-well isolation was investigated both under the normal DTMOS mode and two newly-proposed DTMOS operation modes: moderate (0.6 V0.85 V) modes. While f/sub t/ can be improved to 65 GHz at 12.5 mA with 1.5 V V/sub ds/ bias under normal mode DTMOS operation, a high f/sub t/ of 220 GHz with good linearity and stability is achieved under over-drive operation mode.
Keywords :
CMOS integrated circuits; MOSFET; field effect MMIC; isolation technology; microwave field effect transistors; semiconductor device measurement; stability; 0.6 to 0.85 V; 1.5 V; 12.5 mA; 220 GHz; 65 GHz; B-DTMOS; DTMOS operation modes; RF applications; RF properties; bulk dynamic threshold-voltage MOSFET; deep n-well isolation; linearity; normal DTMOS mode; normal mode DTMOS operation; normal-mode; over-drive mode; over-drive operation mode; stability; Bandwidth; Bipolar transistors; Capacitance; Diodes; Linearity; MOSFET circuits; Power generation; Radio frequency; Radiofrequency amplifiers; Stability;
Conference_Titel :
VLSI Technology, 2001. Digest of Technical Papers. 2001 Symposium on
Conference_Location :
Kyoto, Japan
Print_ISBN :
4-89114-012-7
DOI :
10.1109/VLSIT.2001.934961
