• DocumentCode
    3262775
  • Title

    Consistent model for short-channel nMOSFET post-hard-breakdown characteristics

  • Author

    Kaczer, B. ; Degraeve, R. ; De Keersgieter, A. ; Van de Mieroop, K. ; Bearda, T. ; Groeseneken, G.

  • Author_Institution
    IMEC, Leuven, Belgium
  • fYear
    2001
  • fDate
    12-14 June 2001
  • Firstpage
    121
  • Lastpage
    122
  • Abstract
    We show that dissimilar post-hard-breakdown nFET characteristics can be consistently explained by the location of a constant-size breakdown path. A physically based model and an equivalent circuit for a hard-broken nFET are given.
  • Keywords
    MOSFET; equivalent circuits; semiconductor device breakdown; semiconductor device models; semiconductor device testing; constant-size breakdown path; dissimilar post-hard-breakdown nFET characteristics; equivalent circuit; hard-broken nFET; model; physically based model; short-channel nMOSFET; short-channel nMOSFET post-hard-breakdown characteristics; Analytical models; Doping; Electric breakdown; Electrons; Equivalent circuits; FETs; Length measurement; MOSFET circuits; Performance analysis; Roentgenium;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, 2001. Digest of Technical Papers. 2001 Symposium on
  • Conference_Location
    Kyoto, Japan
  • Print_ISBN
    4-89114-012-7
  • Type

    conf

  • DOI
    10.1109/VLSIT.2001.934979
  • Filename
    934979
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3262775