Title :
Consistent model for short-channel nMOSFET post-hard-breakdown characteristics
Author :
Kaczer, B. ; Degraeve, R. ; De Keersgieter, A. ; Van de Mieroop, K. ; Bearda, T. ; Groeseneken, G.
Author_Institution :
IMEC, Leuven, Belgium
Abstract :
We show that dissimilar post-hard-breakdown nFET characteristics can be consistently explained by the location of a constant-size breakdown path. A physically based model and an equivalent circuit for a hard-broken nFET are given.
Keywords :
MOSFET; equivalent circuits; semiconductor device breakdown; semiconductor device models; semiconductor device testing; constant-size breakdown path; dissimilar post-hard-breakdown nFET characteristics; equivalent circuit; hard-broken nFET; model; physically based model; short-channel nMOSFET; short-channel nMOSFET post-hard-breakdown characteristics; Analytical models; Doping; Electric breakdown; Electrons; Equivalent circuits; FETs; Length measurement; MOSFET circuits; Performance analysis; Roentgenium;
Conference_Titel :
VLSI Technology, 2001. Digest of Technical Papers. 2001 Symposium on
Conference_Location :
Kyoto, Japan
Print_ISBN :
4-89114-012-7
DOI :
10.1109/VLSIT.2001.934979
