Retention time improvement by fast-pull and fast-cool (FPFC) ingot growing combined with proper arrangement of subsequent thermal budget for 0.18 /spl mu/m DRAM cell and beyond

Author

Kim Ilgweon ; Kwon Jaesoon ; Lee Kyosung ; Kim Dongchan ; Shin Jungho ; Choy Junho ; Kim Namsung ; Yang Heesik ; Cheon Youngil ; Park Juseok ; Kwon Woyup ; Song Youngjin ; Park Daeyoung ; Kim Jibum

Author_Institution

Memory R&D Div., Hyundai Electron. Co. Ltd., Chungbuk, South Korea

fYear

2001

fDate

12-14 June 2001

Firstpage

125

Lastpage

126

Abstract

The denudation scheme based on vacancy-assisted BMD (bulk micro defect) formation for reducing grown-in defects and the method of reducing STI-stress caused by denudation thermal budget was investigated to improve the retention time of high density DRAM with STI (shallow trench isolation). In this paper, we report the denudation scheme employing low-cost FPFC (fast-pull and fast-cool) ingot growth, combined with proper arrangement of subsequent thermal budget, resulting in excellent improvement of DRAM retention time.

Keywords

DRAM chips; annealing; cooling; getters; isolation technology; semiconductor growth; semiconductor process modelling; vacancies (crystal); 0.18 micron; DRAM cell; DRAM retention time; FPFC ingot growth; STI; STI-stress reduction; denudation scheme; denudation thermal budget; fast-pull/fast-cool ingot growth; gettering; grown-in defect reduction; high density DRAM; retention time; shallow trench isolation; thermal budget; vacancy-assisted bulk micro defect formation; Annealing; Cooling; Costs; Gettering; Hydrogen; Oxidation; Random access memory; Research and development; Silicon; Stress;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 2001. Digest of Technical Papers. 2001 Symposium on

Conference_Location

Kyoto, Japan

Print_ISBN

4-89114-012-7

Type

conf

DOI

10.1109/VLSIT.2001.934981

Filename

934981